Package outline

Page 2

Formosa MS

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Features

In compliance with EU RoHS 2002/95/EC directives.

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•

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•

•

•

R

75mΩ@V =-4.5V

R

95mΩ@V =-2.5V

R

130mΩ@V =-1.8V

DS(ON)

GS

DS(ON)

GS

DS(ON)

GS

≦

≦

≦

Super high density cell design for extremely low R

Exceptional on-resistance and maximum DC current capability

DS(ON)

PARAMETER

Drain-source voltage

Drain current-continue

Maximum power dissipation

Gate- source voltage-continue

Operation junction temperature range

CONDITIONS

Symbol

V

DSS

P

D

T

J

R

θJA

-55 to +150

Limit

-20

100

UNIT

V

o

C

o

C/W

M

A

o

V

GS

I

D

1.3

±8.0

-3.2

V

A

W

Thermal resistance-junction to ambient*

-pulsed

I

DM

-13

Storage temperature range

T

STG

-65 to +150

o

C

20V P-Channel Enhancement

Mode MOSFET

Mechanical data

Epoxy:UL94-V0 rated flame retardant

Case :

Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

Mounting Position : Any

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Molded plastic, SOT-23

Weight : Approximated 0.008 gram

-2.6

T= 25 C

A

O

T= 70 C

A

O

Document ID

Issued Date

Revised Date

Revision

Page.

T= 25 C

A

O

T= 70 C

A

O

0.8

* The device mounted on 1in FR4 board with 2 oz copper

2

FMS2301A

SOT-23

Dimensions in inches and (millimeters)

0.035 (0.89)

0.051 (1.30)

0.063 (1.60)

0.047 (1.20)

0.108 (2.75)

0.083 (2.10)

0.027 (0.67)

0.013 (0.32)

(A)

(B)

(C)

P-Channel SMD MOSFET

DS-231172

2011/03/10

2015/06/26

C

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