Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Low profile surface mounted application in order to

optimize board space.

Low power loss, high efficiency.

High current capability, l

Ultra high-speed switching.

Silicon epitaxial planar chip, metal silicon junction.

Lead-free parts meet environmental standards of

MIL-STD-19500 /228

Features

ow forward voltage drop.

High surge capability.

Guardring for overvoltage protection.

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Page 2

Formosa MS

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

Issued Date

Revised Date

Revision

Page.

2.0A

Surface Mount

Schottky Barrier Rectifiers - 20V-40V

Low VF

Chip

Rectifier

Low VF Schottky Barrier

A

Notes 1: Measured at 1 0 MHz and applied reverse voltage of 4.0 Volts

.

Peak forward surge current 8 3ms single half sine wave

.-

Maximum instantaneous forward voltage at I

2 0A

=.

F

Maximum average forward rectified current

Maximum repetitive peak reverse voltage

Operating junction temperature range

Typical junction capacitance Note 1

()

Maximum DC reverse current

Maximum DC blocking voltage

at rated DC blocking voltage

Storage temperature range

Maximum RMS voltage

()

JEDEC Method

PARAMETER

SYMBOLS

SL22-MH1

0.38

20

14

20

-+

55 to 150

-+

55 to 100

SL23-MH1

2.0

50

1.0

160

30

21

30

0.40

SL24-MH1

40

28

40

0.40

UNITS

Volts

Volts

Volts

Volts

Amps

Amps

mA

pF

°C

°C

Mechanical data

Epoxy : UL94-V0 rated flame retardant

Case : Molded plastic,

Terminals :Plated terminals, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by cathode band

Mounting Position : Any

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SOD-123H1

Weight : Approximated 0.0103 gram

DS-12165G

2014/03/21

-

A

7

SL22-MH1 THRU SL24-MH1

Package outline

Dimensions in inches and (millimeters)

SOD-123H1

0.031(0.8) Typ.

0.146(3.7)

0.130(3.3)

0.004(0.1) Typ.

0.031(0.8) Typ.

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)