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DMNH6022SSD Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMNH6022SSD Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page ![]() DMNH6022SSD Document number: DS37865 Rev. 5 - 2 4 of 7 www.diodes.com August 2016 © Diodes Incorporated DMNH6022SSD 0 0.01 0.02 0.03 0.04 0.05 0.06 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature V GS = 10V, ID = 5A V GS = 6V, ID = 5A 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current T J = 125 oC T J = 85 oC T J= 25 oC T J = -55 oC V GS = 0V T J = 150 oC T J = 175 oC 10 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 55 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance f=1MHz C rss C oss C iss 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 Qg (nC) Figure 11. Gate Charge V DS = 30V, ID = 6A 0.001 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area P W =10s P W =10ms P W =100µs DC R DS(ON) Limited P W =1ms P W =100ms T J(Max) = 175℃ TC = 25℃ Single Pulse DUT on 1*MRP Board V GS= 10V P W =1s 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature I D = 250μA I D = 1mA |
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