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DMTH10H015LPS Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMTH10H015LPS
Description  100V 175째C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH10H015LPS Datasheet(HTML) 4 Page - Diodes Incorporated

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DMTH10H015LPS
Document number: DS38713 Rev. 2 - 2
4 of 7
www.diodes.com
June 2016
© Diodes Incorporated
DMTH10H015LPS
0
0.005
0.01
0.015
0.02
0.025
0.03
-50
-25
0
25
50
75 100 125 150 175
V
= 6.0V
GS
I
= 20A
D
V
= 10V
GS
I
= 20A
D
T , JUNCTION TEMPERATURE ( C)
J
Figure 7 On-Resistance Variation with Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50
-25
0
25
50
75
100 125 150 175
I = 1mA
D
I = 250µA
D
T , JUNCTION TEMPERATURE ( C)
J
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 175°C
A
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
1
10
100
1000
10000
0
10
20
30
40
50
Ciss
Coss
Crss
f=1MHz
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
0
2
4
6
8
10
0
5
10
15
20
25
30
35
V
= 50V
DS
I = 10A
D
Q , TOTAL GATE CHARGE (nC)
g
Figure 11 Gate Charge
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
RDS(on)
Limited
DC
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
P
= 1µs
W
T
= 175°C
J (m ax )
T
= 25°C
C
V
= 10V
GS
Single Pulse
DUT on 1 * MRP Board
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 12 SOA, Safe Operation Area
P
= 10µs
W



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