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BAS16HT1 Datasheet(PDF) 1 Page - ON Semiconductor |
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BAS16HT1 Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 4 page  © Semiconductor Components Industries, LLC, 2004 February, 2004 − Rev. 3 1 Publication Order Number: BAS16HT1/D BAS16HT1 Preferred Device Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25 °C PD 200 1.57 mW mW/ °C Thermal Resistance Junction to Ambient RθJA 635 °C/W Junction and Storage Temperature TJ, Tstg −55 to 150 °C 1. FR-4 Minimum Pad. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) IR − − − 1.0 50 30 µAdc Reverse Breakdown Voltage (IBR = 100 µAdc) V(BR) 75 − Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF − − − − 715 855 1000 1250 mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR − 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 Ω) trr − 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω) QS − 45 pC http://onsemi.com SOD−323 CASE 477 STYLE 1 MARKING DIAGRAM Preferred devices are recommended choices for future use and best overall value. 1 CATHODE 2 ANODE A6 = Specific Device Code M = Date Code Device Package Shipping† ORDERING INFORMATION BAS16HT1 SOD−323 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 2 A6 M |
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