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BFW13 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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BFW13 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS IGS VGS = 10 V TC = 150 OC 100 100 pA nA IDSS VDS = 15 V VGS = 0 V 0.2 1.5 mA VGS VDS = 15 V ID = 50 µA 0.1 1.0 V V(P)GS VDS = 15 V ID = 500 pA 1.2 V IyfsI IyosI VDS = 15 V VGS = 0 V 1500 10 µµµµS IyfsI IyosI VDS = 15 V ID = 200 µA f = 1.0 MHz 500 5.0 µµµµS Ciss Crs VDS = 15 V f = 1.0 MHz 5.0 0.8 pF Vn VDS = 15 V ID = 200 µA BW = 0.6 to 100 Hz 500 nV N-CHANNEL SILICON FET DEPLETION MODE BFW13 DESCRIPTION: The ASI BFW13 is Designed for Low Noise Video Amplifier Applications. MAXIMUM RATINGS ID 10 mA IG 5.0 mA VDS 30 V VDG 30 V VGS 30 V Ptot 150 mW @ TA = 110 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC θθθθ JA 590 OC/W PACKAGE STYLE TO- 72 Order code: ASI10832 1 = SOURCE 2 = DRAIN 3 = GATE 4 = SHIELD |
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