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ESDA6V1W5 Datasheet(PDF) 2 Page - STMicroelectronics |
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ESDA6V1W5 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage temperature coefficient C Capacitance per line Rd Dynamic resistance VF Forward voltage drop ELECTRICAL CHARACTERISTICS (Tamb = 25°C) V I V RM PP I RM I V BR R I V CL slope : 1 / R d Symbol Parameter Test conditions Value Unit VPP ESD discharge MIL STD 883C - Method 3015-6 IEC1000-4-2, air discharge IEC1000-4-2, contact discharge 25 16 9 kV PPP Peak pulse power (8/20 µs) 150 W Top Operating temperature range - 40 to + 85 °C Tj Junction temperature 150 °C Tstg Storage temperature range - 55 to + 150 °C TL Lead solder temperature (10 secondes duration) 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Types VBR @ IR IRM @ VRM Rd αTC VF @ IF min. max. max. typ. max. typ. max. note 1 note 2 0V bias VV mA µAV m Ω 10 -4/°CpF V mA ESDA6V1W5 6.1 7.2 1 1 3 350 6 90 1.25 200 note 1 : Square pulse Ipp = 15A, tp=2.5 µs. note 2 : ∆ VBR = αT* (Tamb -25°C) * VBR (25°C) ESDA6V1W5 2/7 |
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