| Electronic Components Datasheet Search |
|
2N6514 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2N6514 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2N6514 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA ; IB= 0 300 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A ;IB= 3A 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.7 V IEBO Emitter Cutoff Current VEB= 6V; IC= 0 3.0 mA hFE DC Current Gain IC= 5A; VCE= 3V 10 50 Is/b Second Breakdown Collector Current with Base Forward Biased VCE= 35V,t= 1.0s,Nonrepetitive 3.16 A VCE= 200V,t= 1.0s,Nonrepetitive 0.1 A COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 100 pF |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |