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CD4148WSP Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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CD4148WSP Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 2 page  Page:P2-P1 Chip Diodes GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Switching Diode FEATURES • Silicon epitaxial planar diode • SMD chip pattern, available in various dimension included 1206 & 0603 • Leadfree and RoHS compliance components • For small signal switching and operating ambient temperature less than 55oC and voltage withstand less than 60V; not suitable for AC switching input as rectified circuit and high reverse voltage location MECHANICAL CHARACTERISTICS • Size: 0805 • Weight: approx. 6mg • Marking: Cathode terminal THERMAL CHARACTERISTICS1) Parameter at Tamb=25 oC1) Symbol Value Unit Forward Power Dissipation Power derating above 25 oC Ptot 200 mW 1.6 mW/ oC Junction Temperature Tj 150 oC Thermal Resistance Junction to Ambient air RθJA 375 oC/W Operating& Storage Temperature range Tstg -55 to 150 oC MAXIMUM RATING1) Parameter at Tamb=25 oC1) Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 75 V Average rectified current sin half wave rectification with resistive load IF(AV) 150 mA Repetitive Peak Forward Current at Tamb=25°C IFRM 300 mA Non-Repetitive Surge Forward Current at t<1s and Tj=25 oC at t 8.3ms and Tj=25 oC IFSM 500 mA 1000 mA ELECTRICAL CHARACTERISTICS 1) Parameter at Tamb=25 oC1) Symbol Value Unit Forward Voltage at IF=10mA at IF=100mA VF 1.0 MAX V 1.25 MAX V Leakage Current at VR=20V Leakage Current at VR=75V IR 0.025 MAX uA 5 MAX uA Capacitance at VR=0V, f=1MHz Ctot 4 MAX pF Reverse Recovery Time at IF =IR=10mA,RL=100Ω trr 4 MAX ns 1) Valid provided that electrodes are kept at ambient temperature. 0805 L 2.0±0.2 mm W 1.25±0.2 mm T 0.85±0.1 mm C 0.45±0.2 mm CD4148WSP |
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