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BC847PN Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Part # BC847PN
Description  Plastic-Encapsulate Transistors
PDF  2 Pages
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Manufacturer  HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]
Direct Link  http://www.hottech.net.cn/
Logo HOTTECH - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

BC847PN Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

  BC847PN Datasheet HTML 1Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. BC847PN Datasheet HTML 2Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.  
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Page:P2-P1
Plastic-Encapsulate Transistors
GUANGDONG
HOTTECH
INDUSTRIAL
CO,. LTD.
SOT-363
Features
·
Epitaxial Die Construction
·
Two internal isolated NPN/PNP Transistors in
one package
·
Ultra-Small Surface Mount Package
Mechanical Data
·
Case: SOT-363, Molded Plastic
·
Case material - UL Flammability Rating
Classification 94V-0
·
Moisture sensitivity: Level 1 per J-STD-020A
·
Terminals: Solderable per MIL-STD-202,
Method 208
·
Terminal Connections: See Diagram
·
Marking (See Page 3): K7P
·
Ordering & Date Code Information: See Page 3
·
Weight: 0.006 grams (approx.)
Maximum Ratings
PNP BC857B Section
@ TA = 25°C unless otherwise specified
Maximum Ratings
NPN BC847B Section
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
100
mA
Peak Collector Current
ICM
200
mA
Peak Emitter Current
IEM
200
mA
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
Pd
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
625
°C/W
Operating and Storage Temperature Range
Tj,TSTG
-65 to +150
°C
Maximum Ratings
Total Device
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current
IC
-100
mA
Peak Collector Current
ICM
-200
mA
Peak Emitter Current
IEM
-200
mA
BC847PN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
G
C1
B2
E2
E1
B1
C2


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