MMST4403 datasheet(1/2 Pages) HOTTECH

Part #	MMST4403

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Epitaxial planar die construction.

Complementary PNP type available(MMST4401).

Ultar-small surface mount package.

Marking:K3T

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-40

V

Collector-Emitter Voltage

V

CEO

-40

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-600

mA

Collector Power Dissipation

PC

200

mW

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-100μA,IE=0

-40

V

Collector-emitter breakdown voltage

VCEO

IC=-1mA,IB=0

-40

V

Emitter-base breakdown voltage

VEBO

IE=-100μA,IC=0

-5

V

Collector cut-off current

ICEX

VCE=-35V,VEB(OFF)=-0.4V

-0.1

μA

Base cut-off current

IBL

VCE=-35V,VEB(OFF)=-0.4V

-0.1

μA

DC current gain

hFE

VCE=-1V,IC=-0.1mA

VCE=-1V,IC=-1.0mA

VCE=-1V,IC=-10mA

VCE=-2V,IC=-150mA

VCE=-2V,IC=500mA

30

60

100

20

300

Collector-emitter saturation voltage

VCE(sat)

IC=-150mA, IB=-15mA

IC=-500mA, IB=-50mA

-0.4

-0.75

V

Base-emitter saturation voltage

VBE(sat)

IC=-150mA, IB=-15mA

IC=-500mA, IB=-50mA

-0.95

-1.3

V

Transition frequency

fT

VCE=-10V,IC= -1.0mA, f=1.0kHz

200

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

8.5

pF

Delay time

Td

VCC=-30V,VBE(off)=-2V,

IC=-150mA,IB1=-15mA

15

nS

Rise time

tr

20

nS

Storage time

ts

VCC=-30V,IC=-150mA,

IB1=IB2=-15mA

225

nS

Fall time

tf

30

nS

MMST4403 (PNP)

1. BASE

2. EMITTER

SOT-323

3. COLLECTO

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MMST4403 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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