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MMSTA42 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Part # MMSTA42
Description  Plastic-Encapsulate Transistors
PDF  2 Pages
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Manufacturer  HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]
Direct Link  http://www.hottech.net.cn/
Logo HOTTECH - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

MMSTA42 Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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Plastic-Encapsulate Transistors
GUANGDONG
HOTTECH
INDUSTRIAL
CO,. LTD.
FEATURES
High breakdown voltage
Low collector-emitter saturation voltage
Complementary to MMSTA92(PNP)
Marking: K3M
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current -Continuous
I
C
300
mA
Collector Power Dissipation
PC
300
mW
Storage Temperature
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC=100μA,IE=0
300
V
Collector-emitter breakdown voltage
VCEO
IC=1mA,IB=0
300
V
Emitter-base breakdown voltage
VEBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=200V,IE=0
0.25
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE(1)
VCE=10V,IC=1mA
60
hFE(2)
VCE=10V,IC=10mA
100
200
hFE(3)
VCE=10V,IC=30mA
75
Collector-emitter saturation voltage
VCE(sat)
IC=20mA,IB=2mA
0.2
V
Base-emitter saturation voltage
VBE(sat)
IC=20mA,IB=2mA
0.9
V
Transition frequency
fT
VCE=20V,IC=10mA,f=30MHz
50
MHz
MMSTA42(NPN)
1. BASE
2. EMITTER
SOT-323
3. COLLECTO


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