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PXT2222A Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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PXT2222A Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 2 page  Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FEATURES Epitaxial planar die construction. Complementary NPN type available PXT2907A. Ideal for medium power amplification and switching. MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO 75 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 6 V Collector Current -Continuous I C 600 mA Collector Power Dissipation P C 500 mW Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage VCBO IC= 10μ A,IE=0 75 V Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage VEBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0. 01 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0. 01 μA DC current gain hFE(1) VCE=10V, IC= 0.1mA 35 hFE(2) VCE=10V, IC= 1mA 50 hFE(3) VCE=10V, IC= 10mA 75 hFE(4) VCE=10V, IC= 150mA 100 300 hFE(5) VCE=1V, IC= 150mA 50 hFE(6) VCE=10V, IC= 500mA 40 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 1 V VCE(sat) IC=150mA, IB=15mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 2.0 V VBE(sat) IC=150mA, IB=5mA 0.6 1.2 V Transition frequency fT VCE=10V, IC=20mA f=100MHz 300 MHz Output Capacitance Cob VCB=10V, IE= 0,f=1MHz 8 pF Delay time td VCC=30V, IC=150mA VBE(off)=0.5V,IB1=15mA 10 nS Rise time tr 25 nS Storage time tS VCC=30V, IC=150mA IB1=- IB2= 15mA 225 nS Fall time tf 60 nS 1. BASE 2. COLLECTO SOT-89 3. EMITTER PXT2222A(NPN) |
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