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DMTH3002LPS Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMTH3002LPS
Description  30V 175째C N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH3002LPS Datasheet(HTML) 4 Page - Diodes Incorporated

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DMTH3002LPS
Document number: DS38282 Rev. 3 - 2
4 of 7
www.diodes.com
June 2016
© Diodes Incorporated
DMTH3002LPS
0
0.0005
0.001
0.0015
0.002
0.0025
0.003
0.0035
0.004
-50
-25
0
25
50
75
100
125
150
175
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS = 10V, ID = 25A
V
GS = 4.5V, ID = 25A
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
A = 125
oC
T
A = 85
oC
T
A = 25
oC
T
A = -55
oC
V
GS = 0V
T
A = 150
oC
T
A = 175
oC
100
1000
10000
0
5
10
15
20
25
30
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
C
rss
C
oss
C
iss
0
2
4
6
8
10
0
20
40
60
80
Q
g (nC)
Figure 11. Gate Charge
V
DS = 15V, ID = 25A
0.1
1
10
100
1000
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
P
W =10ms
P
W =100µs
R
DS(ON) Limited
P
W =1ms
P
W =100ms
T
J(Max) = 175℃
T
C = 25℃
Single Pulse
DUT on Infinite Heatsink
V
GS= 10V
P
W =1s
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
175
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs.
JunctionTemperature
I
D = 250μA
I
D = 1mA



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