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MBR760 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR760 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBR760 FEATURES · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss/High Efficiency · High Surge Capability · High Current Capability,Low Forward Voltage Drop · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 60 V VR(RMS) RMS Reverse Voltage 42 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 125℃ 7.5 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase, 60Hz) 150 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ |
Similar Part No. - MBR760 |
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Similar Description - MBR760 |
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