©2014 Silicon Storage Technology, Inc.

DS-70005004G

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2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

SST12LP17E

Data Sheet

Product Description

The SST12LP17E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech-

nology.The input/output RF ports are fully matched to 50

internally. These RF ports are DC decoupled and

require no DC-blocking capacitors or matching components. This helps reduce the system board’s Bill of Materi-

als (BOM) cost.

SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency Power Amplifier module designed in compli-

ance with IEEE 802.11b/g/n applications. It typically provides 28 dB gain with 28% power-added effi-

ciency (PAE) @ POUT = 21.5 dBm for 802.11g and 33% PAE @ POUT = 22.5 dBm for 802.11b.

This power amplifier has excellent linearity, typically 3% added EVM at 18 dBm output power which is essential

for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 21.5 dBm and 802.11b spectrum

mask at 22.5 dBm. Using MCS7 modulation, with 40 MHz bandwidth, the SST12LP17E provides 17 dBm at

2.5% EVM.

The device also features easy board-level usage along with high-speed power-up/down control through a single

lable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating

current, make the SST12LP17E ideal for the final stage power amplification in battery-powered 802.11b/g/n

WLAN transmitter and Bluetooth applications.

The SST12LP17E has an excellent on-chip, single-ended power detector, which features wide dynamic-range,

>15 dB, with dB-wise linear performance. The excellent on-chip power detector provides a reliable solution

to board-level power control.

The SST12LP17E is offered in both 8-contact X2SON and 8-contact USON packages. See Figure 2 for pin

assignments and Table 1 for pin descriptions.