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BUX348 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUX348 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor BUX348 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ☆ VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 450 V VEBO Emitter-Base Voltage IE = 10 mA 7 V ☆ VCE(sat) Collector-Emitter Saturation Voltage IC= 30A ;IB= 6A IC= 30A ;IB= 6A; Tj = 100 oC 0.9 2 V ☆ VBE(sat) Base-Emitter Saturation Voltage IC= 30A ;IB= 6A IC= 30A ;IB= 6A; Tj = 100 oC 1.5 1.5 V ICBO Collector Cutoff Current VCB=850V; IE= 0 VCB=850V; IE= 0 TC=100℃ 0.4 2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2 mA ☆ Pulsed: Pulse duration = 300 ms, duty cycle = 2 % Switching Times ts Storage Time VCC = 50 V VClamp = 450 V IC = 30 A IB1 = 6 A VBB = -5 V LC = 80 µH RBB = 0.4 Ω Tj = 100 oC 4.5 μ s tf Fall Time 0.4 μ s tc Crossover Time 0.7 μ s |
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