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STP24N60DM2 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP24N60DM2
Description  N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
PDF  21 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP24N60DM2 Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
March 2014
DocID025499 Rev 3
1/21
STB24N60DM2, STP24N60DM2,
STW24N60DM2
N-channel 600 V, 0.175
Ω typ., 18 A FDmesh II Plus™ low Q
g
Power MOSFETs in D
2
PAK, TO-220 and TO-247 packages
Datasheet
− production data
Figure 1. Internal schematic diagram
Features
• Extremely low gate charge and input
capacitance
• Lower R
DS(on)
x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
• Extremely high dv/dt and avalanche
capabilities
Applications
• Switching applications
Description
These FDmesh II Plus™ low Q
g
Power MOSFETs
with intrinsic fast-recovery body diode are
produced using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q
g
. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters and
ideal for bridge topologies and ZVS phase-shift
converters.
D(2, TAB)
G(1)
S(3)
AM01476v1
D2PAK
TO-220
TO-247
1
3
2
TAB
1
2
3
TAB
1
2
3
Order codes
VDS @
TJmax
RDS(on)
max
ID
STB24N60DM2
650 V
0.20
Ω
18 A
STP24N60DM2
STW24N60DM2
Table 1. Device summary
Order codes
Marking
Package
Packaging
STB24N60DM2
24N60DM2
D
2
PAK
Tape and reel
STP24N60DM2
TO-220
Tube
STW24N60DM2
TO-247
www.st.com


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