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STGWA50M65DF2 Datasheet(PDF) 3 Page - STMicroelectronics |
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STGWA50M65DF2 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 16 page ![]() STGWA50M65DF2 Electrical ratings DocID028694 Rev 2 3/16 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 650 V IC(1) Continuous collector current at TC = 25 °C 80 A IC Continuous collector current at TC = 100 °C 50 A ICP(2) Pulsed collector current 150 A VGE Gate-emitter voltage ±20 V IF(1) Continuous forward current at TC = 25 °C 80 A IF Continuous forward current at TC = 100 °C 50 A IFP(2) Pulsed forward current 150 A PTOT Total dissipation at TC = 25 °C 375 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature range - 55 to 175 °C Notes: (1)Current level is limited by bond wires. (2)Pulse width limited by maximium junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.4 °C/W RthJC Thermal resistance junction-case diode 0.96 °C/W RthJA Thermal resistance junction-ambient 50 °C/W |
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