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TSU111ICT Datasheet(PDF) 17 Page - STMicroelectronics |
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TSU111ICT Datasheet(HTML) 17 Page - STMicroelectronics |
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17 / 30 page ![]() TSU111 Application information DocID029790 Rev 2 17/30 5.1.1 Schematic optimization aiming for nanopower To benefit from the full performance of the TSU111, the impedances must be maximized so that current consumption is not lost where it is not required. For example, an aluminum electrolytic capacitance can have significantly high leakage. This leakage may be greater than the current consumption of the op amp. For this reason, ceramic type capacitors are preferred. For the same reason, big resistor values should be used in the feedback loop. However, there are two main limitations to be considered when choosing a resistor. 1. Noise generated: a 100 kΩ resistor generates 40 nV/√Hz, a bigger resistor value generates even more noise. 2. Leakage on the PCB: leakage can be generated by moisture. This can be improved by using a specific coating process on the PCB. 5.1.2 PCB layout considerations For correct operation, it is advised to add 10 nF decoupling capacitors as close as possible to the power supply pins. Minimizing the leakage from sensitive high impedance nodes on the inputs of the TSU111 can be performed with a guarding technique. The technique consists of surrounding high impedance tracks by a low impedance track (the ring). The ring is at the same electrical potential as the high impedance node. Therefore, even if some parasitic impedance exists between the tracks, no leakage current can flow through them as they are at the same potential (see Figure 33: "Guarding on the PCB"). Figure 33: Guarding on the PCB |
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