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2SD1395 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1395 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1395 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA, IB= 0 50 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A, IB= 5mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A, IB= 5mA 2.0 V ICBO Collector Cutoff Current VCB= 50V, IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 50V, IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE DC Current Gain IC= 2.5A; VCE= 3V 1000 15000 fT Current-Gain—Bandwidth Product IC= 2.5A ; VCE= 5V 20 MHz Switching Times ton Turn-on Time IC= 3.0A; IB1= IB2= 6mA 0.6 μ s ts Storage Time 4.0 μ s tf Fall Time 1.5 μ s |
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