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2SD1572 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1572 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1572 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 25mA, IB= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat) -1 Collector-Emitter Saturation Voltage IC= 4A, IB= 8mA 1.5 V VCE(sat) -2 Collector-Emitter Saturation Voltage IC= 8A, IB= 80mA 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A, IB= 8mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A, IB= 80mA 3.5 V ICBO Collector Cutoff Current VCB= 60V, IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 50V, IB= 0 10 uA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 50 mA hFE-1 DC Current Gain IC= 4A; VCE= 3V 1000 20000 Switching Times ton Turn-on Time IC= 4A; IB1= IB2= 8mA 0.5 μ s ts Storage Time 6.0 μ s tf Fall Time 1.5 μ s |
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