DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20120703

2SC3356

DESCRIPTION

The

2SC3356 is an NPN silicon epitaxial transistor designed for

low noise amplifier at VHF, UHF and CATV band.

It has dynamic range and good current characteristic.

FEATURES

• Low Noise and High Gain

• High Power Gain

C)

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

100

mA

Total Power Dissipation

200

mW

Junction Temperature

150

C

Storage Temperature

55 to +150

C

C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

1.0

Emitter Cutoff Current

1.0

DC Current Gain

82

170

270

Gain Bandwidth Product

7

GHz

Feed-Back Capacitance

0.55

1.0

pF

Insertion Power Gain

11.5

dB

Noise Figure

NF

1.1

2.0

dB

*

Pulse Measurement PW

 350
s, Duty Cycle  2 %

** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.

Marking

2SC3356

R24

SOT–23 (TO–236AB)

1

2

3

H