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2SD556 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SD556
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD556 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2SD556
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V (Min)
·
Wide Area of Safe Operation
·
High Power
·
High Current Capability
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for high power AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
20
A
PC
Collector Power Dissipation
@TC=25℃
120
W
Tj
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175
℃


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