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2SD793 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD793 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD793 DESCRIPTION · Collector-Emitter BreakdownVoltage- : V(BR)CEO= 30V(Min.) · Low Collector to Emitter Saturation Voltage : VCE(sat)= 2.0V(Max.)@IC= 1.5A · Excellent hFE linearity · Complement to Type 2SB743 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for audio frequency power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse 5 A PC Collector Power Dissipation @ TC=25℃ 10 W Collector Power Dissipation @ Ta=25℃ 1 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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