DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20120705

SS8050

TO-92

Plastic-Encapsulate Transistors

FEATURES

Power dissipation

: 2 W

unless otherwise noted

℃

Symbol

Parameter

Value

Units

Collector-Base Voltage

40

V

Collector-Emitter Voltage

25

V

Emitter-Base Voltage

5

V

Collector Current -Continuous

1500

mA

Junction and Storage Temperature

-55-150

℃

*These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃

unless

otherwise

specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

40

V

Collector-emitter breakdown voltage

25

V

Emitter-base breakdown voltage

5

V

Collector cut-off current

0.1

µA

Emitter cut-off current

0.1

µA

Emitter cut-off current

0.1

µA

85

400

DC current gain

40

Collector-emitter saturation voltage

0.5

V

Base-emitter saturation voltage

1.2

V

Base-emitter voltage

1

V

Transition frequency

100

MHz

Rank

B

C

D

E

Range

85-160

120-200

160-300

300-400

1 2 3

TO-92

1. EMITTER

2. BASE

3. COLLECTOR