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LM723 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM723 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 14 page ![]() Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. (Note 10) Pulse Voltage from V + to V− (50 ms) 50V Continuous Voltage from V + to V− 40V Input-Output Voltage Differential 40V Maximum Amplifier Input Voltage (Either Input) 8.5V Maximum Amplifier Input Voltage (Differential) 5V Current from V Z 25 mA Current from V REF 15 mA Internal Power Dissipation Metal Can (Note 2) 800 mW Cavity DIP (Note 2) 900 mW Molded DIP (Note 2) 660 mW Operating Temperature Range LM723 −55˚C to +150˚C LM723C 0˚C to +70˚C Storage Temperature Range Metal Can −65˚C to +150˚C Molded DIP −55˚C to +150˚C Lead Temperature (Soldering, 4 sec. max.) Hermetic Package 300˚C Plastic Package 260˚C ESD Tolerance 1200V (Human body model, 1.5 k Ω in series with 100 pF) Electrical Characteristics (Note 3) (Note 10) Parameter Conditions LM723 LM723C Units Min Typ Max Min Typ Max Line Regulation V IN = 12V to VIN = 15V 0.01 0.1 0.01 0.1 % V OUT −55˚C ≤ T A ≤ +125˚C 0.3 % V OUT 0˚C ≤ T A ≤ +70˚C 0.3 % V OUT V IN = 12V to VIN = 40V 0.02 0.2 0.1 0.5 % V OUT Load Regulation I L = 1mAtoIL = 50 mA 0.03 0.15 0.03 0.2 % V OUT −55˚C ≤ T A ≤ +125˚C 0.6 % V OUT 0˚C ≤ T A ≤ +70˚C 0.6 % V OUT Ripple Rejection f = 50 Hz to 10 kHz, C REF = 074 74 dB f = 50 Hz to 10 kHz, C REF = 5µF 86 86 dB Average Temperature Coeffic- −55˚C ≤ T A ≤ +125˚C 0.002 0.015 %/˚C ient of Output Voltage (Note 8) 0˚C ≤ T A ≤ +70˚C 0.003 0.015 %/˚C Short Circuit Current Limit R SC = 10Ω,VOUT = 065 65 mA Reference Voltage 6.95 7.15 7.35 6.80 7.15 7.50 V Output Noise Voltage BW = 100 Hz to 10 kHz, C REF = 0 86 86 µVrms BW = 100 Hz to 10 kHz, C REF = 5 µF 2.5 2.5 µVrms Long Term Stability 0.05 0.05 %/1000 hrs Standby Current Drain I L = 0, VIN = 30V 1.7 3.5 1.7 4.0 mA Input Voltage Range 9.5 40 9.5 40 V Output Voltage Range 2.0 37 2.0 37 V Input-Output Voltage Differential 3.0 38 3.0 38 V θ JA Molded DIP 105 ˚C/W θ JA Cavity DIP 150 ˚C/W θ JA H10C Board Mount in Still Air 165 165 ˚C/W θ JA H10C Board Mount in 400 LF/Min Air Flow 66 66 ˚C/W θ JC 22 22 ˚C/W Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Note 2: See derating curves for maximum power rating above 25˚C. Note 3: Unless otherwise specified, TA = 25˚C, VIN = V + = V C = 12V, V − = 0, V OUT = 5V, IL = 1 mA, RSC = 0, C1 = 100 pF, CREF = 0 and divider impedance as seen by error amplifier ≤ 10 kΩ connected as shown in Figure 1. Line and load regulation specifications are given for the condition of constant chip temperature. Tem- perature drifts must be taken into account separately for high dissipation conditions. Note 4: L1 is 40 turns of No. 20 enameled copper wire wound on Ferroxcube P36/22-3B7 pot core or equivalent with 0.009 in. air gap. Note 5: Figures in parentheses may be used if R1/R2 divider is placed on opposite input of error amp. Note 6: Replace R1/R2 in figures with divider shown in Figure 13. Note 7: V+ and VCC must be connected to a +3V or greater supply. Note 8: For metal can applications where VZ is required, an external 6.2V zener diode should be connected in series with VOUT. www.national.com 3 |
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