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J232 Datasheet(PDF) 1 Page - InterFET Corporation

Part # J232
Description  N-Channel Silicon Junction Field-Effect Transistor
PDF  1 Pages
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Manufacturer  INTERFET [InterFET Corporation]
Direct Link  http://www.interfet.com
Logo INTERFET - InterFET Corporation

J232 Datasheet(HTML) 1 Page - InterFET Corporation

  J232 Datasheet HTML 1Page - InterFET Corporation  
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01/99
B-59
J232
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
– 40 V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
360 mW
Power Derating
3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ232
At 25°C free air temperature:
J232
Process NJ16
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 40
V
IG = – 1 µA, VDS = ØV
Gate Reverse Current
IGSS
– 250
pA
VGS = – 30V, VDS = ØV
Gate Operating Current
IG
– 2
pA
VDS = 20V, ID = ØV
Gate Source Cutoff Voltage
VGS(OFF)
– 3
– 6
V
VDS = 20V, ID = 1 µA
Drain Saturation Current (Pulsed)
IDSS
510
mA
VDS = 20V, VGS = Ø V
Dynamic Electrical Characteristics
Common Source Forward Transconductance
gfs
2500
5000
µS
VDS = 20V, VGS = Ø V
f = 1 kHz
Common Source Output Conductance
gos
5µS
VDS = 20V, VGS = Ø V
f = 1 kHz
Common Source Input Capacitance
Ciss
4pF
VDS = 20V, VGS = Ø V
f = 1 MHz
Common Source Reverse Transfer
Crss
1
pF
VDS = 20V, VGS = Ø V
f = 1 MHz
Capacitance
Equivalent Short Circuit
¯eN
20
30
nV/
√Hz VDS = 10V, VGS = Ø V
f = 10 Hz
Input Noise Voltage
6
nV/
√Hz VDS = 10V, VGS = Ø V
f = 1 kHz
¥ Audio Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp
1/13/99 2:09 PM
Page B-59


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