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PESDXS2UAT Datasheet(PDF) 3 Page - NXP Semiconductors |
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PESDXS2UAT Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 13 page ![]() 2004 Feb 18 3 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UAT series ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PESD3V3S2UAT − plastic surface mounted package; 3 leads SOT23 PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ppp peak pulse power 8/20 µs pulse; notes 1 and 2 PESD3V3S2UAT − 330 W PESD5V0S2UAT − 260 W PESD12VS2UAT − 180 W PESD15VS2UAT − 160 W PESD24VS2UAT − 160 W Ipp peak pulse current 8/20 µs pulse; notes 1 and 2 PESD3V3S2UAT − 18 A PESD5V0S2UAT − 15 A PESD12VS2UAT − 5A PESD15VS2UAT − 5A PESD24VS2UAT − 3A Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C |
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