BAV20WS-G datasheet(2/4 Pages) VISHAY

2 / 4 page

BAV19WS-G, BAV20WS-G, BAV21WS-G

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Vishay Semiconductors

Rev. 1.6, 27-Sep-16

Document Number: 83423

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Forward Current vs. Forward Voltage

Fig. 2 - Admissible Forward Current vs. Ambient Temperature

Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 4 - Dynamic Forward Resistance vs. Forward Current

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA

IF = 200 mA

1.25

Reverse leakage current

VR = 100 V

BAV19WS-G

100

VR = 100 V, Tj = 100 °C

BAV19WS-G

μA

VR = 150 V

BAV20WS-G

100

VR = 150 V, Tj = 100 °C

BAV20WS-G

μA

VR = 200 V

BAV21WS-G

100

VR = 200 V, Tj = 100 °C

BAV21WS-G

μA

Dynamic Forward resistance

IF = 10 mA



Diode capacitance

VR = 0 V, f = 1 MHz

1.5

Reverse recovery time

IF = 30 mA, IR = 30 mA,

iR = 3 mA, RL = 100 

trr

18858

1000

100

0.1

0.01

0.4

0.6

0.8

0.2

VF - Forward Voltage (V)

Tj = 100 °C

25 °C

0.1

0.2

0.3

120

150

18859

Tamb - Ambient Temperature (°C)

Current (rectif.) O

DC current IF

200

18864

Tamb - Ambient Temperature (°C)

250

200

150

100

20 40 60 80 100 120 140 160 180

100

18861

IF - Forward Current (mA)

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