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MMBD301 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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MMBD301 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 2 page  Production specification Schottky Barrier Diodes MMBD301 C136 www.gmicroelec.com Rev.B 1 FEATURES Surface mount package ideally suited for automatic insertion. APPLICATIONS Sourced from process GD. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBD301 4T SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Limits Unit DC Reverse Voltage VR 30 V Power Dissipation Pd 200 mW Operating Junction Temperature Range Tj 150 ℃ Storage Temperature Range TSTG -55 to +150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Symbol Min. TYP. MAX UNIT Test Condition Reverse Breakdown Voltage V(BR)R 30 V IR=10μA Forward Voltage VF 450 600 mV IF=1.0mA IF=10mA Reverse Current IR 200 nA VR=25V Diode Capacitance CD 1.5 pF VR=15V,f=1.0MHz Pb Lead-free |
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