STS4C3F60L

2/11

Table 3: Absolute Maximum ratings

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

Table 4: Thermal Data

(1) When mounted on 1 inch² pad of 2 oz. copper, t

≤ 10 s

Table 5: On/Off

Table 6: Dynamic

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Symbol

Parameter

Value

Unit

N-CHANNEL

P-CHANNEL

60

V

60

V

Gate-source Voltage

± 16

V

Single Operating

43

A

Single Operating

2.5

1.9

A

Drain Current (pulsed)

16

12

A

2

W

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

Rthj-amb (1)

Thermal Resistance Junction-ambient

62.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Drain-source

Breakdown Voltage

n-ch

p-ch

60

60

V

V

Zero Gate Voltage

n-ch

p-ch

1

10

µA

µA

Gate-body Leakage

n-ch

p-ch

±100

±100

nA

nA

n-ch

p-ch

1

1.5

V

V

Static Drain-source On

Resistance

n-ch

p-ch

n-ch

p-ch

0.045

0.100

0.050

0.130

0.055

0.120

0.065

0.160

Ω

Ω

Ω

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Forward

Transconductance

n-ch

p-ch

7

7.2

S

S

Input Capacitance

n-ch

p-ch

1030

630

pF

pF

Output Capacitance

n-ch

p-ch

140

121

pF

pF

Reverse Transfer

Capacitance

n-ch

p-ch

40

49

pF

pF