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CTS6002 Datasheet(PDF) 1 Page - Teledyne Technologies Incorporated

Part # CTS6002
Description  NPN SiGe RF Transistor
PDF  3 Pages
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Manufacturer  TELEDYNE [Teledyne Technologies Incorporated]
Direct Link  http://www.teledynemicrowave.com
Logo TELEDYNE - Teledyne Technologies Incorporated

CTS6002 Datasheet(HTML) 1 Page - Teledyne Technologies Incorporated

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CTS6002
NPN SiGe RF Transistor
DESCRIPTION
PACKAGE STYLE
70 MIL PACKAGE
The CTS6002 is a high gain low noise SiGe RF transistor suitable
for a number of high reliability applications. The CTS6002 is
fabricated in a 70 GHz fT Silicon-Germanium technology. This
device is available in a 70 mil heremetically sealed package.
FEATURES
•
Outstanding NF, F = 0.65 dB @ 1.8GHz
F = 1.2 dB @ 6 GHz
•
Gms = 24dB @ 1.8GHz
•
OIP3 = 26.5 dBm @ 1.8GHz
•
High Reliability/Space grade screening available
•
Available in a hermetically sealed package
MAXIMUM RATINGS
RATING
LIMITS
UNITS
VCEO
4
V
VEBO
1.2
V
VCBO
13
V
VCES
13
V
IC
50
mA
IB
3
mA
PTOT
200
mW
TSTG, TA
-65 to +150
°C
TJ
+150
°C
DC ELECTRICAL CHARACTERISTICS TA = 25°C
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
V(BR)CEO
IC = 1 mA, IB = 0
4
4.5
---
V
ICES
VCE = 13V, VBE = 0
---
---
30
µA
ICBO
VCB = 13V, IE = 0
---
---
100
nA
IEBO
VEB = 0.5V, IC = 0
---
---
3
µA
hFE
IC = 30 mA, VCE = 3V, pulse measured
110
180
270
---


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