Notes:

3. Over/Undershoot specifications are characterized, not 100% tested.

4. Typical values are included for reference only and are not guaranteed or tested.

℃

= 1.0MHz)

PARAMETER

SYMBOL

MIN.

MAX

UNIT

C

e

c

n

a

ti

c

a

p

a

C

t

u

p

n

I

IN

-

6

pF

Input/Output Capacitance

-

8

pF

Note : These parameters are guaranteed by device characterization, but not production tested.

AC TEST CONDITIONS

V

o

t

V

2

.

0

s

l

e

v

e

L

e

s

l

u

P

t

u

p

n

I

CC

- 0.2V

s

n

3

s

e

m

i

T

ll

a

F

d

n

a

e

s

i

R

t

u

p

n

I

Input and Output Timing Reference Levels

1.5V

C

d

a

o

L

t

u

p

t

u

O

L

AC ELECTRICAL CHARACTERISTICS

(1) READ CYCLE

AS6C1008-55

PARAMETER

SYM.

MIN.

MAX.

UNIT

Read Cycle Time

55

-

ns

Address Access Time

-

55

ns

Chip Enable Access Time

-

55

ns

Output Enable Access Time

-

30

ns

Chip Enable to Output in Low-Z

10

-

ns

Output Enable to Output in Low-Z

5

-

ns

Chip Disable to Output in High-Z

-

20

ns

Output Disable to Output in High-Z

-

20

ns

Output Hold from Address Change

10

-

ns

(2) WRITE CYCLE

PARAMETER

SYM.

MIN.

MAX.

UNIT

Write Cycle Time

55

-

ns

Address Valid to End of Write

50

-

ns

Chip Enable to End of Write

50

-

ns

Address Set-up Time

0

-

ns

Write Pulse Width

45

-

ns

Write Recovery Time

0

-

ns

Data to Write Time Overlap

25

-

ns

Data Hold from End of Write Time

0

-

ns

Output Active from End of Write

5

-

ns

Write to Output in High-Z

-

20

ns

*These parameters are guaranteed by device characterization, but not production tested.

AS6C1008-55

®

February 2007

128K X 8 BIT LOW POWER CMOS SRAM

AS6C1008

02/February/07, v 1.0

Alliance Memory Inc.

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