NTHD4N02F datasheet(1/6 Pages) ONSEMI

Part #	NTHD4N02F

Description	Power MOSFET and Schottky Diode

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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October, 2004 − Rev. 7

1

Publication Order Number:

NTHD4N02F/D

NTHD4N02F

Power MOSFET and

Schottky Diode

20 V, 3.9 A, N−Channel, with 3.7 A

Schottky Barrier Diode, ChipFET

t

Features

• Leadless SMD Package Featuring a MOSFET and Schottky Diode

• 40% Smaller than TSOP−6 Package with Better Thermals

• Super Low Gate Charge MOSFET

• Ultra Low V

F Schottky

• Pb−Free Package is Available

Applications

• Fast Switching, low Gate Charge for Dc to Dc Buck and Boost

Converters

• Li−Ion Battery Applications in Cell Phones, PDAs, DSCs, and Media

Players

• Load Side Switching

MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

20

V

Gate−to−Source Voltage

VGS

±12

V

Continuous Drain

Current

Steady

TJ = 25°C

ID

2.9

A

Current

Steady

State

TJ = 85°C

2.1

t

v 5 s TJ = 25°C

3.9

Pulsed Drain Current

tp=10 ms

IDM

12

A

Power Dissipation

Steady

TJ = 25°C

PD

0.91

W

Steady

State

TJ = 85°C

0.36

t

v 5 s TJ = 25°C

2.1

Continuous Source Current (Body Diode)

IS

2.6

A

Operating Junction and Storage

Temperature

TJ, TSTG

−55 to 150

°C

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

SCHOTTKY DIODE MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

VRRM

20

V

DC Blocking Voltage

VR

20

V

Average Rectified

Forward Current

Steady

State

TJ = 25°C

IF

2.2

A

t

v 5 s

TJ = 25 C

3.7

A

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Device

Package

Shipping†

ORDERING INFORMATION

NTHD4N02FT1

ChipFET

3000/Tape & Reel

ChipFET

]

CASE 1206A

STYLE 3

http://onsemi.com

C

A

SCHOTTKY DIODE

20 V

80 m

W @ 2.5 V

60 m

W @ 4.5 V

0.35 V

RDS(on) TYP

3.9 A

3.7 A

ID MAX

V(BR)DSS

MOSFET

SCHOTTKY DIODE

VR MAX

IF MAX

VF TYP

G

D

S

N−Channel MOSFET

1

8

7

6

5

4

3

2

1

MARKING

DIAGRAM

C2 = Specific Device Code

M = Month Code

1

2

3

4

C

D

A

S

G

CONNECTIONS

NTHD4N02FT1G

ChipFET

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

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