STPS2L60ZFY datasheet(2/8 Pages) STMICROELECTRONICS

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Characteristics

STPS2L60ZFY

2/8

DocID029446 Rev 2

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

Tj = -40 °C to +175 °C

IF(AV)

Average forward current

δ = 0.5, square wave

TL = 140 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature range(1)

-40 to +175

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-l)

Junction to lead

°C/W

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

5.6

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 2 A

0.75

Tj = 125 °C

0.60

0.66

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.51 x IF(AV) + 0.075 x IF2(RMS)

For more information, please refer to the following application notes related to the power

losses.



AN604 (Calculation of conduction losses in a power rectifier)



AN4021 (Calculation of reverse losses in a power diode)

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