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STPS8L30-Y Datasheet(PDF) 2 Page - STMicroelectronics

Part # STPS8L30-Y
Description  Automotive low drop power Schottky rectifier
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS8L30-Y Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS8L30-Y
2/8
DocID024083 Rev 1
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.23 x IF(AV) + 0.021 x IF
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
30
V
IF(RMS)
Forward rms current
7
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 135 °C
8
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
IRRM
Peak repetitive reverse current
tp = 2 µs, F = 1kHz square
1
A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
2
A
Tstg
Storage temperature range
-65 to +150
°C
Tj
Operating junction temperature(1)
-40 to +150
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
1.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3. Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
2.5
°C/W
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
--
1
mA
Tj = 100 °C
-
15
40
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 8 A
-
-
0.49
V
Tj = 125 °C
-
0.35
0.40
Tj = 25 °C
IF = 16 A
-
-
0.63
Tj = 125 °C
-
0.448
0.57
1.
Pulse test: tp = 5 ms, δ < 2%
2.
Pulse test: tp = 380 µs, δ < 2%



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