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STD6N65M2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD6N65M2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 23 page  August 2014 DocID026762 Rev 1 1/23 STB6N65M2, STD6N65M2 N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages Datasheet - preliminary data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. 1 3 TAB DPAK D PAK 2 1 3 TAB AM15572v1 , TAB Order codes VDS RDS(on) max ID STB6N65M2 650 V 1.35 Ω 4 A STD6N65M2 Table 1. Device summary Order codes Marking Package Packaging STB6N65M2 6N65M2 D2PAK Tape and reel STD6N65M2 DPAK www.st.com |
Similar Part No. - STD6N65M2 |
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Similar Description - STD6N65M2 |
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