STW28N60M2 datasheet(3/21 Pages) STMICROELECTRONICS

3 / 21 page

STB28N60M2, STI28N60M2, STP28N60M2,

STW28N60M2

Electrical ratings

DocID025254 Rev 4

3/21

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM(1)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

170

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

Notes:

(1)Pulse width limited by safe operating area.

(2)ISD ≤ 22 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V.

(3)VDS ≤ 480 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

D²PAK

I²PAK

TO-220

TO-247

Rthj-case

Thermal resistance junction-case max

0.74

°C/W

Rthj-pcb

Thermal resistance junction-pcb max(1)

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Notes:

(1)When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive

(pulse width limited by Tjmax)

3.6

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V)

350

STW28N60M2 Datasheet(PDF) 3 Page - STMicroelectronics

STW28N60M2 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

Datasheet Download

Link URL