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IRKT41/04AS90 Datasheet(PDF) 3 Page - International Rectifier |
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IRKT41/04AS90 Datasheet(HTML) 3 Page - International Rectifier |
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3 / 10 page  IRK.41, .56 Series 3 Bulletin I27131 rev. G 10/02 www.irf.com A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound T J Junction operating temperature range T stg Storage temp. range - 40 to 125 R thJC Max. internal thermal resistance, junction 0.23 0.20 Per module, DC operation to case R thCS Typical thermal resistance case to heatsink T Mounting torque ± 10% to heatsink 5 busbar 3 wt Approximate weight 110 (4) gr (oz) Case style TO-240AA JEDEC Thermal and Mechanical Specifications Parameters IRK.41 IRK.56 Units Conditions - 40 to 125 0.1 (5) Available with dv/dt = 1000V/ µs, to complete code add S90 i.e. IRKT41/16AS90. °C K/W Nm Mounting surface flat, smooth and greased I RRM Max. peak reverse and I DRM off-state leakage current at VRRM, VDRM 2500 (1 min) 50 Hz, circuit to base, all terminals 3500 (1 sec) shorted dv/dt Max. critical rate of rise T J = 125oC, linear to 0.67 V DRM , of off-state voltage (5) gate open circuit 15 mA T J = 125 oC, gate open circuit 500 V/ µs Blocking V INS RMS isolation voltage V Triggering P GM Max. peak gate power 10 10 P G(AV) Max. average gate power 2.5 2.5 I GM Max. peak gate current 2.5 2.5 A -V GM Max. peak negative gate voltage 4.0 TJ = - 40°C 2.5 TJ = 25°C 1.7 TJ = 125°C 270 TJ = - 40°C 150 mA TJ = 25°C 80 TJ = 125°C V GD Max. gate voltage that will not trigger I GD Max. gate current that will not trigger Parameters IRK.41 IRK.56 Units Conditions 0.25 V 6mA Anode supply = 6V resistive load V GT Max. gate voltage required to trigger Anode supply = 6V resistive load I GT Max. gate current required to trigger W V 10 T J = 125oC, rated V DRM applied T J = 125oC, rated V DRM applied Parameters IRK.41 IRK.56 Units Conditions Sine half wave conduction Rect. wave conduction Devices Units 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o IRK.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34 IRK.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28 °C/W ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) |
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