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STD35P6LLF6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD35P6LLF6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() April 2017 DocID025600 Rev 3 1/16 This is information on a product in full production. www.st.com STD35P6LLF6 P- channel 60 V, 0.025 Ω typ., 35 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDSS RDS(on) max. ID PTOT STD35P6LLF6 60 V 0.028 Ω 35 A 70 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packaging STD35P6LLF6 35P6LLF6 DPAK Tape and Reel AM11258v1 D(2, TAB) S(3) G(1) |
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