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STF7N65M2 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STF7N65M2
Description  Extremely low gate charge
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF7N65M2 Datasheet(HTML) 5 Page - STMicroelectronics

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DocID026763 Rev 2
5/13
STF7N65M2
Electrical characteristics
13
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
5
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
20
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 5 A, VGS = 0
-
1.6
V
trr
Reverse recovery time
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 19)
-
275
ns
Qrr
Reverse recovery charge
-
1.62
µC
IRRM
Reverse recovery current
-
11.8
A
trr
Reverse recovery time
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 19)
-
430
ns
Qrr
Reverse recovery charge
-
2.54
µC
IRRM
Reverse recovery current
-
11.9
A



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