STL6P3LLH6 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STL6P3LLH6

4/15

DocID023668 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0, ID = 250 µA

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 30 V

µA

VGS = 0, VDS = 30 V

TC = 125 °C

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 3 A

0.024

0.03

Ω

VGS = 4.5 V, ID = 3 A

0.038

0.05

Ω

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V

f = 1 MHz

VGS = 0

1450

Coss

Output capacitance

178

Crss

Reverse transfer capacitance

120

Total gate charge

VDD = 24 V, ID = 6 A,

VGS = 4.5 V

(see Figure 13: "Switching

times test circuit for

resistive load")

Qgs

Gate-source charge

4.4

Qgd

Gate-drain charge

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 24 V, ID = 3 A

RG = 4.7 Ω

VGS = 10 V

Rise time

td(off)

Turn-off delay time

Fall time

For the P-channel Power MOSFETs the actual polarity of the voltages and the

current must be reversed.

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