2SD1047 datasheet(1/10 Pages) STMICROELECTRONICS

Part #	2SD1047

Description	Power supply

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 10 page

April 2011

Doc ID 018729 Rev 1

1/10

10

2SD1047

High power NPN epitaxial planar bipolar transistor

Features

■ High breakdown voltage VCEO = 140 V

■ Typical ft = 20 MHz

■ Fully characterized at 125 oC

Application

■ Power supply

Description

The device is a NPN transistor manufactured

using new BiT-LA (Bipolar transistor for linear

amplifier) technology. The resulting transistor

shows good gain linearity behaviour.

Figure 1.

Internal schematic diagram

TO-3P

1

2

3

Table 1.

Device summary

Order code

Marking

Package

Packaging

2SD1047

TO-3P

Tube

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