STGP3HF60HD datasheet(4/26 Pages) STMICROELECTRONICS

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Electrical characteristics

STGB3HF60HD, STGD3HF60HDT4,

STGF3HF60HD, STGP3HF60HD

4/26

DocID17690 Rev 5

Electrical characteristics

(Tj=25 °C unless otherwise specified).

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage (VGE = 0)

IC = 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 0.5 A,

Tj = 125 °C

1.4

VGE = 15 V, IC = 1.5 A

2.45

2.95

VGE = 15 V, IC = 1.5 A,

Tj = 125 °C

1.85

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250 µA

3.75

5.75

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

250

µA

VCE = 600 V,

Tj = 125 °C

IGES

Gate-emitter leakage current

(VCE = 0)

VGE = ± 20 V

± 100

gfs

Forward transconductance

VCE = 15 V, IC = 1.5 A

1.5

Table 5: Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

152

Coes

Output capacitance

Cres

Reverse transfer capacitance

Total gate charge

VCE = 480 V,

IC = 1.5 A, VGE = 15 V

(see Figure 18: " Gate

charge test circuit")

Qge

Gate-emitter charge

Qgc

Gate-collector charge

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