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STL62P3LLH6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL62P3LLH6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() October 2016 DocID025836 Rev 6 1/16 This is information on a product in full production. www.st.com STL62P3LLH6 P-channel -30 V, 9 mΩ typ., -62 A STripFET™ H6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STL62P3LLH6 -30 V 10.5 mΩ -62 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STL62P3LLH6 62P3LLH6 PowerFLATTM 5x6 Tape and reel . |
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