STPS80H100C datasheet(3/7 Pages) STMICROELECTRONICS

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STPS80H100C

Characteristics

Doc ID 6727 Rev 3

3/7

Figure 1.

Average forward power dissipation

versus average forward current

(per diode)

Figure 2.

Average forward current versus

ambient temperature

(

δ = 0.5, per diode)

IF(av) (A)

PF(av)(W)

δ=tp/T

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

100

125

150

175

Tamb(°C)

IF(av)(A)

Rth(j-a)=5°C/W

Rth(j-a)=Rth(j-c)

δ=tp/T

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

P(tp)

(1µs)

ARM

t (µs)

0.2

0.4

0.6

0.8

1.2

100

125

150

P(T )

(25 °C)

ARM

T (°C)

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 6.

Relative variation of thermal

impedance junction to case versus

pulse duration (per diode)

1E-3

1E-2

1E-1

1E+0

100

200

300

400

500

t(s)

IM(A)

Tc=50°C

Tc=75°C

Tc=110°C

δ=0.5

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

δ=tp/T

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