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STPSC8H065CT Datasheet(PDF) 1 Page - STMicroelectronics |
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STPSC8H065CT Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  This is information on a product in full production. November 2013 DocID024808 Rev 2 1/8 STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Features No or negligible reverse recovery Switching behavior independent of temperature High forward surge capability Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature. Especially suited for use in interleaved or bridge- less topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. A1 K A2 A1 A2 K TO-220AB STPSC8H065CT Table 1. Device summary Symbol Value IF(AV) 2 x 4 A VRRM 650 V Tj (max) 175 °C www.st.com |
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