STTH50W03C datasheet(3/9 Pages) STMICROELECTRONICS

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STTH50W03C

Characteristics

Table 5. Dynamic electrical characteristics per diode

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IRM

Reverse recovery current

Tj = 125 °C

IF = 25 A, VR = 200 V

dIF/dt = -200 A/µs

QRR

Reverse recovery charge

170

Sfactor

Softness factor

0.3

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A, VR = 30 V

dIF/dt = -100 A/µs

tfr

Forward recovery time

Tj = 25 °C

IF = 25 A, VFR = 1.2 V

dIF/dt = 400 A/µs

120

VFP

Forward recovery voltage

2.5

3.6

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Forward voltage drop versus forward

current (typical values, per diode)

PF (

AV)(W )

d=tp/T

IF(AV)(A)

d = 0.2

d = 0.05

d = 0.1

d =1

d = 0.5

0.1

1.0

10.0

100.0

1000.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

I F (A)

= 150

= 25

VF (V)

Figure 3. Forward voltage drop versus forward

current (maximum values, per diode)

Figure 4. Relative variation of thermal

impedance junction to case versus pulse

duration

I F (A)

0.1

1.0

10.0

100.0

1000.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T = 25

°C

T = 150

°C

VF (V)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Zth(j-c)/Rth(j-c)

Single pulse

tp(s)

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