| Electronic Components Datasheet Search |
|
T1610H Datasheet(PDF) 3 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
T1610H Datasheet(HTML) 3 Page - STMicroelectronics |
|
3 / 9 page ![]() DocID024630 Rev 1 3/9 T1610H Characteristics Table 4. Static characteristics Symbol Test conditions Value Unit VTM ITM = 22.5 A, tp = 380 µs Tj = 25 °C MAX. 1.55 V Vto Threshold voltage Tj = 150 °C 0.80 V Rd Dynamic resistance Tj = 150 °C 22 m IDRM, IRRM VD = VDRM, VR = VRRM Tj = 25 °C 5 µA Tj = 150 °C 2 mA Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 1.0 °C/W Rth(j-a) Junction to ambient (AC) 60 °C/W Figure 1. Maximum power dissipation versus average on-state current (full cycle) Figure 2. On-state rms current versus case temperature (full cycle) P(W) 0 2 4 6 8 10 12 14 16 18 02468 10 12 14 16 I (A) T(RMS) 180° I (A) T(RMS) 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 T (°C) C Figure 3. On-state rms current versus ambient temperature (free air convection) Figure 4. Relative variation of thermal impedance versus pulse duration I (A) T(RMS) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 T (°C) a K = [Z / R ] th th 1.0E-02 1.0E-01 1.0E+00 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 Z th(j-c) Z th(j-a) t (s) p |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |